Synthesis and Morphology of Silicon Nanoparticles by Deposition Time Varying Lpcvd Method to Demonstrate the Variation of Height, Density and Size

The confinement of the modern day semiconductor devices is fast propelling the growth of nanoparticles as an excellent constituent of such device and the characteristics like quantum size confinement and coulomb blockade effect of the same is accelerating their application in this field. But before the fabrication of devices with the nanoparticles, their morphological and electrical characteristics needs to be studied in order to have a sense about the efficiency of such a device. In this experiment, Silicon nanoparticles have been deposited on SiO2 substrate by thermal decomposition of silane using Low Pressure Chemical Vapor Deposition (LPCVD) Method with varying deposition times. Then, the morphology of the sample, the size as well as distribution of the nanoparticles is investigated using Atomic Force Microscopy (AFM) and the Scanning Probe Image Processor (SPIP). It shows that all the characteristics of the nanoparticles like height, density and size of the nanoparticles change with the varying deposition time. The size of the nanoparticles varied between 2-10nm whereas the height and density varied between 1-3nm and 2X10/cm 3.5X10/cm respectively.